Growth of graphene films from non-gaseous carbon sources

摘要

In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

主权项

1. A method of forming a graphene film, wherein the method comprises:
a. depositing a non-gaseous carbon source onto a catalyst surface; b. exposing the non-gaseous carbon source to at least one gas, wherein the at least one gas comprises a gas flow rate; and c. initiating the conversion of the non-gaseous carbon source to the graphene film, wherein the formed graphene film comprises one or more layers of graphene, and wherein the thickness of the graphene film is controllable by adjusting the gas flow rate.