| 发明名称 | Semiconductor light emitting device having patterns | ||
| 摘要 | A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode. | ||
| 申请公布号 | US9099628(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201314109075 | 申请日期 | 2013.12.17 |
| 申请人 | ROHM CO., LTD. | 发明人 | Ito Yohei |
| 分类号 | H01L29/06;H01L33/60;H01L33/22;H01L33/38 | 主分类号 | H01L29/06 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A semiconductor light emitting device, comprising: a substrate structure that includes a substrate and an adhering layer formed on the substrate, the adhering layer being a metal layer disposed on the substrate; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer, the substrate being stuck to the semiconductor layer using the adhering layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode. | ||
| 地址 | Kyoto JP | ||