Power bipolar structure, in particular for high voltage applications

摘要

A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure.

主权项

1. A power bipolar structure, comprising:
first, second, and third terminals; and a power bipolar transistor having a first elemental bipolar cell electrically coupled to said first, second, and third terminals and including:
a first elemental power bipolar structure, corresponding to a first finger of said power bipolar transistor, electrically coupled between said first and second terminals;a first driving block that includes a first driving section coupled to the first elemental power bipolar structure;a first control circuit configured to control the first elemental power bipolar structure; anda first sensing section configured to detect information regarding operation of said first elemental power bipolar structure, said first sensing section being configured to supply the first control circuit with a current that depends on a local temperature of said first elemental power bipolar structure,wherein said first driving section is electrically coupled between said first terminal and a first inner circuit node and includes a driving bipolar transistor, said first inner circuit node being electrically coupled to a base terminal of said first elemental power bipolar structure, andwherein said first sensing section is electrically coupled between said first terminal and a second inner circuit node and includes a sensing bipolar transistor, having in turn a base terminal connected to said base terminal of said first elemental power bipolar structure and to said first inner circuit node.