发明名称 |
Nonvolatile resistor network assembly and nonvolatile logic gate with increased fault tolerance using the same |
摘要 |
Provided is a nonvolatile resistor network assembly characterized by that: it comprises a first and a second resistor network which are each composed of a plurality of nonvolatile resistive elements connected together; it also comprises a write means for writing into the first and second resistor networks; and writing into the first and second resistor networks is performed by the use of the write means in a manner to make total resistances of respectively the first and second resistor networks different from each other. Further provided is a nonvolatile logic gate which performs logical operation using stored data determined by the total resistances of the respective nonvolatile resistor networks. |
申请公布号 |
US9100013(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201214344446 |
申请日期 |
2012.09.06 |
申请人 |
NEC CORPORATION |
发明人 |
Nebashi Ryusuke;Sakimura Noboru;Tsuji Yukihide;Sugibayashi Tadahiko |
分类号 |
H03K19/00;H03K19/173;H03K19/177;H03K19/18;G11C11/16;G11C19/08 |
主分类号 |
H03K19/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A nonvolatile resistor network assembly comprising
a first and a second resistor network each composed of a plurality of nonvolatile resistive elements connected together, and a write unit for writing into said first and second resistor networks, wherein writing into said first and second resistor networks is performed by the use of said write unit in a manner to make total resistance values of respectively said first and second resistor networks different from each other, wherein said write unit comprises a circuit composed of magnetic domain wall motion elements connected in series together. |
地址 |
Tokyo JP |