发明名称 Nonvolatile resistor network assembly and nonvolatile logic gate with increased fault tolerance using the same
摘要 Provided is a nonvolatile resistor network assembly characterized by that: it comprises a first and a second resistor network which are each composed of a plurality of nonvolatile resistive elements connected together; it also comprises a write means for writing into the first and second resistor networks; and writing into the first and second resistor networks is performed by the use of the write means in a manner to make total resistances of respectively the first and second resistor networks different from each other. Further provided is a nonvolatile logic gate which performs logical operation using stored data determined by the total resistances of the respective nonvolatile resistor networks.
申请公布号 US9100013(B2) 申请公布日期 2015.08.04
申请号 US201214344446 申请日期 2012.09.06
申请人 NEC CORPORATION 发明人 Nebashi Ryusuke;Sakimura Noboru;Tsuji Yukihide;Sugibayashi Tadahiko
分类号 H03K19/00;H03K19/173;H03K19/177;H03K19/18;G11C11/16;G11C19/08 主分类号 H03K19/00
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A nonvolatile resistor network assembly comprising a first and a second resistor network each composed of a plurality of nonvolatile resistive elements connected together, and a write unit for writing into said first and second resistor networks, wherein writing into said first and second resistor networks is performed by the use of said write unit in a manner to make total resistance values of respectively said first and second resistor networks different from each other, wherein said write unit comprises a circuit composed of magnetic domain wall motion elements connected in series together.
地址 Tokyo JP