| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve reduction in the interface state between a silicon carbide layer and a gate insulating film, thereby increasing carrier mobility.SOLUTION: A silicon carbide semiconductor device includes at least one or more layers of an oxide film, a nitride film or an oxynitride film, as a gate insulating film 22, on silicon carbide substrates 12a, 12b. The gate insulating film 22 including the interface between the silicon carbide substrates 12a, 12b and the gate insulating film 22 contains 1×10/cmor more of chlorine therein. The gate insulating film 22 is formed by thermal oxidation in dry oxygen containing no moisture.</p> |
