SEMICONDUCTOR DEVICE AND MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

The technical idea of the present invention relates to a semiconductor device and a method of manufacturing a semiconductor device. An n-type metal layer only exists on an nMOS region. A p-type metal layer only exists on a pMOS region. Therefore, the efficiency of a gate etching process can be improved and a step difference between gates can be reduced. For this, a cell region, an nMOS region, and a pMOS region are formed in a substrate. The nMOS region includes an n-type metal layer. The pMOS region includes a p-type metal layer. The cell region excludes the n-type metal layer and the p-type metal layer. The nMOS region excludes the p-type metal layer. The pMOS region excludes the n-type metal layer.