SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device composed of a compound semiconductor which has high radiation performance and good crystal quality.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: a first step of forming a crystal layer (3) of a compound semiconductor on a semiconductor substrate (1); a second step of forming a first metal layer (4) on the crystal layer formed in the first step in a shape of an island; a third step of removing the crystal layer in a region on the semiconductor substrate, where the first metal layer is not formed; a fourth step of forming a second metal layer (5) on a support substrate (10) having thermal conductivity higher than that of the compound semiconductor; a fifth step of bonding the semiconductor substrate and the support substrate by joining the first metal layer and the second metal layer; and a sixth step of removing the semiconductor substrate leaving the crystal layer.