ION IMPLANTATION DEVICE, AND METHOD OF CONTROLLING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of protecting a power supply from an overcurrent caused by generation of a load current.SOLUTION: In an ion implantation device 10, shielding means shields an ion beam B in the middle of a beam line. A plasma shower device 40 is provided at a downstream side of the beam line from the shielding means. A controller 60 makes the shielding means shield the ion beam B in an ignition start time period of the plasma shower device 40. The shielding means may be provided at an upstream side of the beam line from at least one or more high-voltage electric field type electrode parts. Gas supply means may supply a source gas to the plasma shower device 40. The controller 60 may make the gas supply means start supplying the source gas after making the shielding means shield the ion beam B.