| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the uniformity of gas flow in a process container and the uniformity of the temperature in the process container.SOLUTION: A substrate processing apparatus 1 performs processing to a wafer W and includes: a process container 10 that stores the wafer W in an airtight manner; a placement base 11 where a substrate is placed in the process container 10; and an exhaust mechanism 80 which exhausts air in the process container 10. The process container 10 includes: a body part 20 with a closed bottom which opens on an upper surface; a cylindrical part 22 including a flange 21 which closes the upper surface of the body part 20 in an airtight manner and a side wall 40 having a diameter which is smaller than that of the body part 20 and larger than an outer surface of the placement base 11; and a lid 23 which is provided on an upper surface of the flange 21 and closes an opening of the body part 20 in an airtight manner. A heater 42 is disposed at a groove part 41 on the upper surface of the flange 21. An engagement member 43 which protrudes toward a center direction of the side wall 40 is provided at a lower end of the side wall 40 of the cylindrical part 22. A baffle plate 44 in which multiple openings 44a are formed is disposed on an upper surface of the engagement member 43.</p> |
