| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device or a plasma processing method, in which yield is improved by inhibiting a sample to be processed from being contaminated.SOLUTION: There is disclosed a plasma processing device or a plasma processing method, in which a sample arranged inside a vacuum container and arranged inside a processing chamber is processed by using plasma formed inside the processing chamber. A temperature of a location constituting an inside surface of a film which is arranged inside the processing chamber and covers a surface of a base material of a first member composing an inside surface facing the plasma, the film being formed by flame spray of a material consisting of a dielectric on the surface of the base material, is adjusted so as to become equal to or less than 55°C according to the processing condition of the film. |
