发明名称 WAFER PROCESSING METHOD AND APPARATUS
摘要 Provided is a method and an apparatus for bonding a first substrate and a second substrate. In an embodiment, a first wafer chuck has a first curved surface, and a second wafer chuck has a second curved surface. For bending the first wafer and the second wafer before bonding, the first wafer is arranged on the first wafer chuck, and the second wafer is arranged on the second wafer chuck. When the first wafer and the second wafer are bent in advance, the first wafer and the second wafer are bonded.
申请公布号 KR20150088691(A) 申请公布日期 2015.08.03
申请号 KR20140038039 申请日期 2014.03.31
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HUANG CHIH HUI;TSAO CHUN HAN;CHEN SHENG CHAU;TU YEUR LUEN;TSAI CHIA SHIUNG;CHEN XIAOMENG
分类号 H01L21/58 主分类号 H01L21/58
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