发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor module which can cool the high heating part of a transistor element efficiently, and is excellent in the connection reliability of wiring joint.SOLUTION: A power semiconductor module includes a heat sink 1, a circuit board connected with the heat sink 1 via a bonding material, and having the wiring formed on the surface of an insulating substrate 2, a transistor element 5 including a main electrode 6 and a control electrode 7 formed on one surface and a back electrode formed the other surface, where the back electrode is connected with the circuit board via a bonding material, a first conductive member 10 bonded to the main electrode 6 via a bonding material, and wire or ribbon-like connection terminals 11, 12 for electrically connecting the first conductive member 10 and control electrode 7 with other element or the circuit board. The control electrode 7 is arranged at the corner of the main electrode 6, and the first conductive member 10 has a shape of notching the upper part of the first conductive member 10.
申请公布号 JP2015142059(A) 申请公布日期 2015.08.03
申请号 JP20140015049 申请日期 2014.01.30
申请人 HITACHI LTD;HITACHI POWER SEMICONDUCTOR DEVICE LTD 发明人 MOTOWAKI NARIHISA;HOZOJI HIROYUKI;MORITA TOSHIAKI;KONNO TETSUTOYO
分类号 H01L21/60;H01L23/36;H01L25/07;H01L25/18 主分类号 H01L21/60
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