| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing deterioration in diode recovery characteristics.SOLUTION: An IGBT region 110 has an n-type emitter region 12, a p-type IGBT body region 16, an n-type IGBT barrier region 18, an n-type IGBT drift region 20, a p-type collector region 22, a first trench 30, a first insulating film 32, and a first gate electrode 34. A diode region 120 has a p-type diode top body region 66a, an n-type diode barrier region 68, a p-type diode bottom body region 66b, an n-type cathode region 69, a second trench 80, a second insulating film 82, and a second gate electrode 84. In the diode barrier region 68, an n-type impurity concentration of a first part 68a contacted with the second insulating film 82 is higher than that of the IGBT barrier region 18. |
