| 摘要 |
<p>The present invention relates to an etching solution composition of a silicon-based compound layer and, more specifically, to an etching solution composition of a silicon-based compound layer with excellent selectivity with respect to a silicon oxide layer and a silicon nitride layer, which comprises at least one imidazole derivative compound selected from the group consisting of 1-isopropyl-2-methylimidazole, 1-isopropylimidazole, and 1-vinylimidazole; an acid compound of at least one type selected from the group consisting of phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, and sulfonic-based compounds; a fluorinated compound; and water.</p> |
