EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH LATERALLY EXTENDED PORTION

摘要

In some embodiments of a method, provided is a body structure formed on a gate structure. The gate structure includes a gate side wall crossing the body structure. A spacer is formed on the gate side wall. A first concave part is formed in the body structure. The first concave part is formed next to the spacer, and is laterally extended below the spacer. A concave extension part is formed below the first concave part for extending vertical depth of the first concave part. A stressor material having a lattice constant different from a lattice constant of the body structure for filling the first extended concave part.