发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which plasma can be generated with good stability and reproducibility. ! SOLUTION: A substrate processing apparatus has a processing container, substrate holding means which is inserted into the processing container and removed therefrom while holding a plurality of substrates, gas supply means for supplying gas into the processing container, a plasma formation unit having a pair of side walls projecting to the outer peripheral side of the processing container, and a space formed by the side walls communicates with the processing container, a pair of electrodes provided on the outside each of the pair of side walls, an insulating protection cover provided so as to arrange the electrode in a space between itself and the side wall, and a high frequency power supply connected with the pair of electrodes. At least one of the pair of electrodes has a shape projecting to the side wall side. ! COPYRIGHT: (C)2015,JPO&INPIT
申请公布号 JP2015142118(A) 申请公布日期 2015.08.03
申请号 JP20140016137 申请日期 2014.01.30
申请人 TOKYO ELECTRON LTD 发明人 SATO SEISHIN
分类号 H01L21/31;C23C16/507 主分类号 H01L21/31
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