| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of being formed by using only ordinary manufacturing processes of a semiconductor device, including a connection structure where current concentration does not occur. ! SOLUTION: Wiring members are made to be a first wiring member and a second wiring member. On the first wiring member, an insulation member is laminated so as to coat a stage interval part and further the second wiring member is formed. The second wiring member forms a current path between contact areas in an area divided by the stage interval part. ! COPYRIGHT: (C)2015,JPO&INPIT |
