| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-receiving element which enables the manufacturing of a device (e.g. solar battery) increased in carrier life and superior in carrier extraction efficiency.SOLUTION: A light-receiving element comprises: a superlattice semiconductor layer having a superlattice structure arranged by repeatedly laminating a barrier layer and a quantum dot layer including quantum dots so that they are alternated. Each barrier layer includes at least one of Ga and Al, and As and Sb. Each quantum dot layer includes In and As. The value "q" given by the composition ratio Sb/(Sb+As) of the barrier layer, and the distance "d" (nm) between the quantum dots in a laminating direction of the superlattice semiconductor layer satisfy the following relation: q≥(3d+10)/100. |
