| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-speed and compact anti-fuse memory and a semiconductor storage device with enhanced reliability of readout information.SOLUTION: A compact circuit configuration can be obtained because dielectric breakdown can be made on a program gate insulating film 12 only, with an identical word line WL1 shared between a switch gate electrode 7 and a program gate electrode 8. Also, a thin formation of a film thickness of a switch gate insulating film 11 can be obtained if the work function of the switch gate electrode 7 is changed, and high-speed ON/OFF operation in a channel region at the switch gate electrode 7 can be achieved at data readout. Even if a readout gate voltage is repeatedly applied to the program gate electrode 8, the program gate insulating film 12 is broken, causing no generation of a data written state, and thus, reliability of readout information at the data readout can be improved.</p> |
