发明名称 使用雷射光于绝缘基板形成贯通孔之方法;METHOD FOR FORMING THROUGH-HOLE IN INSULATING SUBSTRATE BY USING LASER BEAM
摘要 本发明提供一种有意抑制加工所需之时间之贯通孔之形成方法。;本发明系一种使用雷射光于绝缘基板形成贯通孔之方法,其包括:(1)于具有第1表面之虚设绝缘基板沿着与上述第1表面平行之一方向而相对于雷射光移动之状态下,对上述虚设绝缘基板之上述第1表面照射上述雷射光,而于上述虚设绝缘基板形成贯通孔之步骤;(2)掌握上述贯通孔相对于上述虚设绝缘基板之上述第1表面之垂线之倾斜角α(-90°<α<+90°)的步骤;及(3)除了雷射光相对于绝缘基板之第1表面之垂线倾斜角度β以外,以与上述(1)之步骤相同之条件,于上述绝缘基板形成贯通孔之步骤,且上述角度β系以与上述倾斜角α相对于上述垂线线对称而成为β=-α之方式被选定。 A method including a) forming a through-hole in a dummy substrate including a surface by radiating a laser to the surface of the dummy substrate in a state where the dummy substrate is moved relative to the laser along a direction parallel to the surface of the dummy substrate, b) determining an angle α (-90 °; α; + 90° ) of the through-hole relative to a line perpendicular to the surface of the dummy substrate, and c) forming a through-hole in the insulating substrate with the same conditions as step a) except for radiating a laser at an angle β relative to a line perpendicular to a surface of the insulating substrate. The angle β is set to be line symmetric with the angle α relative to the line perpendicular to the surface of the insulating substrate and satisfy a relationship of β
申请公布号 TW201529215 申请公布日期 2015.08.01
申请号 TW103131048 申请日期 2014.09.09
申请人 旭硝子股份有限公司 ASAHI GLASS COMPANY, LIMITED 发明人 堀内浩平 HORIUCHI, KOHEI
分类号 B23K26/38(2014.01);B23K26/08(2014.01);C03B33/08(2006.01) 主分类号 B23K26/38(2014.01)
代理机构 代理人 陈长文
主权项
地址 日本 JP