| 摘要 |
Photoelectric cell, the novelty being (1) a first epitaxial semiconductor layer (ESL) of a cpd. of elements from Gps. III and V of the periodic system, the lower part of the layer being doped to give one conductivity type (A) and the upper part doped to give opposite conductivity (B) and form a rectifying p-n junction with band gap 0.4-2.3 eV and lattic constant (LC) 5.4-6.1 angstrom; (2) layer (1) is covered by a second ESL (2) of a III-V cpd., doped to give conductivity (B), with the same band gap and LC as layer (1), and forming a hetero-boundary layer with layer (1); (3) a third ESL (3) of a III-V cpd., the lower part doped for conductivity (A) and the upper part doped to give type (B), forming a p-n junction and a band gap of 0.4-2.3 eV but larger than the band gap of layer (1) and forming a second hetero-boundary with layer (2), i.e. an n-p boundary. The lengthy claims include cells with a tunnel boundary layer. An inexpensive, multilayer solar cell with a high degree of energy conversion and suitable for general applications. |
