半导体装置及半导体装置的制造方法;SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

半导体装置包括：半导体区、第一井区、第二井区、源极区、汲极区、通道区、及闸极绝缘膜。该第一井区和该第二井区系形成在彼此毗连的该半导体区中。该源极区系在该第一井区上；该汲极区系在该第二井区上。该半导体区具有第一区、第二区、及第三区。该第三区中之掺杂浓度系高于该第一区中之掺杂浓度。该第一井区具有第一导电型；该第二井区具有第二导电型。; the drain region is on the second well region. The semiconductor region has a first region, a second region, and a third region. A dopant concentration in the third region is higher than a dopant concentration in the first region. The first well region has a first conductive type; the second well region has a second conductive type.