发明名称 |
Method for producing Bi-Sb monocrystalline semiconductors |
摘要 |
<p>The invention relates to the semiconductor production technology, in particular to methods for producing monocrystalline semiconductors from semimetals.The method for producing Bi-Sb monocrystalline semiconductors comprises the smooth compression of a monocrystalline semimetallic bismuth-stibium wire with the stibium concentration of 6 atm. % using a tension device, wherein the wire is secured perpendicular to the tensile force vector, while measuring the electrical resistance of the wire at room temperature to the attainment of the ductile compression.</p> |
申请公布号 |
MD857(Z) |
申请公布日期 |
2015.07.31 |
申请号 |
MDS20130146 |
申请日期 |
2013.08.22 |
申请人 |
INSTITUTUL DE INGINERIE ELECTRONICA SI NANOTEHNOLOGII "D. GHITU" AL ASM;INSTITUTUL DE FIZICA APLICATA AL ACADEMIEI DE STIINTE A MOLDOVEI |
发明人 |
NIKOLAEVA ALBINA;KONOPKO LEONID;BODIUL PAVEL;POPOV ION;BOTNARI OXANA;BORTOI TUDOR |
分类号 |
C30B33/00;C01G29/00;C01G30/00;G01N27/00;G01N27/02 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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