| 摘要 |
Plain magneto-sensitive device of the Hall contains three identical flat-magnetic-sensitive Hall sensors - a first (1), second (2) and third (3) consisting of an n-type semiconductor substrate (4, 5 and 6), on one side of each of the sockets (4, 5 and 6) are formed from left to right alternately and at equal distances from one another three rectangular ohmic contacts - the first (7, 8 and 9), second (10, 11 and 12) and third ( 13, 14 and 15) arranged parallel to the long sides, with second contacts (10, 11, 12) are central and compared them symmetrically on both long sides are located the other pairs of contacts (7, 13), (8 and 14 ), (9 and 15). The contact (11) of the sensor (2) is connected to one terminal of a current source (16). The socket (8) of the sensor (2) is connected to the outlet (7) of the sensor (1), the contact (14) of the sensor (2) is connected to the outlet (15) of the sensor (3) and the contact (13) of the sensor (1) is connected to the outlet (9) of the sensor (3) and the other terminal of the current source (16). The contact (10) of the sensor (1) and outlet (12) of the sensor (3) are connected to the input of the first measuring amplifier (17), a first (8) and third contact (14) of the sensor (2) are joined by a second input of the measuring amplifier (18). The contact (10) of the sensor (1) and outlet (8) of the sensor (2) are connected to only non-inverter respectively with the inverting inputs of the amplifiers (17 and 18). The outputs of the amplifiers (17 and 18) are connected to the input of a differential amplifier (19) whose output is the output (20) of the device of the Hall, as the magnetic field (21) is parallel to the long sides of the contacts (7, 8, 9 , 10, 11, 12, 13, 14 and 15). |
