METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS

摘要

The present invention provides a method of manufacturing a semiconductor device, which can restrict reduction of throughput depending on the increase in a size of a substrate. A first film is formed on the substrate by supplying a first treatment gas into a treatment room by a first treatment gas supply unit through a flow control device interposed therein. When an exhaust pressure is detected by a pressure detector after at least the first treatment gas is supplied to the treatment room, a signal indicating the detected exhaust pressure is transmitted to a control unit. When the control unit receives the signal, the control unit controls a pressure controller and the flow control device such that the exhaust pressure becomes a predetermined pressure. After the first film is formed, the purge gas is supplied by a purge gas supply unit. A second treatment gas is supplied in the treatment room by a second treatment gas supply unit through the flow control device interposed therein.