| 摘要 |
<p>Structures and related processes for effectively regulating power among slave chips in a 3D memory multichip package that employs TSVs for interlevel chip connections. Individual voltage regulators are employed on one or more of the slave chips for accurate level control of internal voltages, for example, word line driver voltage (VPP), back bias voltage (VBB), data line voltage (VDL), and bit line pre-charge voltage/cell plate voltage (VBLP/VPL). Employing regulators on one or more of the slave chips not only allows for precise regulation of power levels during typical memory stack operation, but also provides tolerance in small variations in power levels caused, for example, by manufacturing process variations. Moreover, less chip real estate is used as compared to techniques that provide complete power generators on each chip of a multichip stack.</p> |
