发明名称 POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a positive resist material that has a high effect of inhibiting diffusion of an acid and high resolution and gives a good pattern profile and edge roughness after exposure.SOLUTION: The positive resist material comprises the following polymeric compound as a base resin. The polymeric compound contains a repeating unit in which a hydrogen atom of a carboxyl group and/or a phenolic hydroxyl group is replaced by an acid-labile group, and a repeating unit (a) having a caramel furanone ester represented by general formula (1), and has a weight average molecular weight ranging from 1,000 to 500,000. In the formula, Rrepresents a hydrogen atom or a methyl group; Rrepresents a methyl group or an ethyl group; and X represents a 1-12C connecting group having a single bond, an ester group, an ether group or a lactone ring, a phenylene group, or a naphthylene group.
申请公布号 JP2015138238(A) 申请公布日期 2015.07.30
申请号 JP20140011312 申请日期 2014.01.24
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;HASEGAWA KOJI
分类号 G03F7/039;C08F220/10;G03F7/004;H01L21/027 主分类号 G03F7/039
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