发明名称 LARGE-AREA ATOMIC LAYER DEPOSITION APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a batch processing type large-area atomic layer deposition apparatus that can carry out an atomic layer vapor deposition process for many large-area glass substrates.SOLUTION: A large-area atomic layer deposition apparatus includes: a vacuum chamber 100 in which a vacuum can be produced; a partition valve formed on right and left side faces of the vacuum chamber; a process gas supply part 110 which is arranged upstream from the vacuum chamber, and jets a process gas as a laminar flow from above to below; a gas suction/discharge part 120 which is arranged below the vacuum chamber, and sucks a gas in the vacuum chamber and discharges it; a cassette 130 in which many substrates are vertically loaded and which is arranged between the process gas supply part and gas suction/discharge part so as to form an internal chamber for atomic layer vapor deposition process. Further, the large-area atomic layer deposition apparatus includes a cassette contact part 140 which is arranged above the gas suction/discharge part in the vacuum chamber, and elevates a cassette entering the vacuum chamber to bring the cassette into contact with the process gas supply part.</p>
申请公布号 JP2015137415(A) 申请公布日期 2015.07.30
申请号 JP20140011412 申请日期 2014.01.24
申请人 NCD CO LTD 发明人 SHIN WOONG CHUL;CHOI KYU JEONG;BAEK MIN;SEONG NAK JIN
分类号 C23C16/458;C23C16/455 主分类号 C23C16/458
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