| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in withstand voltage and can be manufactured with high yield.SOLUTION: A semiconductor device 1 comprises: ptype body regions 17 formed at a distance from each other in a surface layer of an SiC epitaxial layer 14; ntype source regions 19 each formed at a distance from a circumference of each ptype body region 17 in a surface layer of each ptype body region 17; gate electrodes 10 each of which is formed astride the ptype body regions 17 and faces a channel region 22 between a circumference of the ptype body region 17 and the ntype source region 19 across a gate insulation film 21 and selectively divided by a cavity part 25 in a JFET region 18 between the neighboring ptype body regions 17; and an intermediate insulation film 30 which is formed in the cavity part 25 and has a thickness thicker than that of the gate insulation film 21.</p> |
