| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an optical semiconductor element and a manufacturing method of the same, which can form a ridge waveguide structure of a spot size converter with high controllability, which achieves a favorable horizontal and vertical spot size.SOLUTION: An optical semiconductor element comprises on a GaAs substrate 11: a first conductivity type lower clad layer 12; an active layer 14 including a quantum dot layer; and an upper clad layer composed of a first upper clad layer 16 provided from the active layer 14 side and a second upper clad layer 17 having a refraction index higher than that of the first upper clad layer 16. The optical semiconductor element has a ridge waveguide structure in which a thickness of the first upper clad layer 16 decreases with the decreasing distance from an emission end in a waveguide emission side region and a width of the first upper clad layer 16 increases with the decreasing distance from the emission end in the waveguide emission side region.</p> |
