| 发明名称 |
Ag-DOPED P-TYPE ZnO-BASED SEMICONDUCTOR CRYSTAL LAYER |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an Ag-doped low-resistance p-type ZnO-based semiconductor crystalline layer.SOLUTION: There is provided an Ag-doped p-type ZnO-based semiconductor crystalline layer doped with Ag having an atomic ratio of positive elements of 2% or higher below 3%.</p> |
| 申请公布号 |
JP2015137189(A) |
申请公布日期 |
2015.07.30 |
| 申请号 |
JP20140008239 |
申请日期 |
2014.01.21 |
| 申请人 |
STANLEY ELECTRIC CO LTD |
发明人 |
SANO MICHIHIRO;KATO HIROYUKI;SAITO SENJU;YAMAMOTO TETSUYA |
| 分类号 |
C30B29/16 |
主分类号 |
C30B29/16 |
| 代理机构 |
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