SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.

主权项

1. A semiconductor device comprising:
a first transistor comprising a source and a drain; and a second transistor comprising a gate, the gate directly connecting to one of the source and the drain, wherein each of the source and the drain includes a first Cu—X alloy film, wherein the gate includes a second Cu—X alloy film, wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti, and wherein the first Cu—X alloy film and the second Cu—X alloy film are covered with an oxide film including X.