| 发明名称 |
REPLACEMENT LOW-K SPACER |
| 摘要 |
A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer. |
| 申请公布号 |
US2015214330(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201414163687 |
申请日期 |
2014.01.24 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
WAN Jing;LIU Jin Ping;BOUCHE Guillaume;WEI Andy;VANAMURTHY Lakshmanan H.;XU Cuiqin;KUCHIBHATLA Sridhar;KAMBHAMPATI Rama;CAI Xiuyu |
| 分类号 |
H01L29/66;H01L21/311;H01L21/28;H01L21/3105 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
providing a gate structure having a gate, a first spacer conformal to a top and vertical sides of the gate, and an interlayer dielectric on the first spacer; removing the interlayer dielectric to reveal the first spacer removing the first spacer conformal to the top and vertical sides of the gate; and depositing a second spacer conformal to the top and the vertical sides of the gate, the second spacer formed of a material having a lower dielectric constant than the first spacer. |
| 地址 |
Grand Cayman KY |
