A CAPACITIVELY COUPLED ELECTRODELESS PLASMA APPARATUS AND A METHOD USING CAPACITIVELY COUPLED ELECTRODELESS PLASMA FOR PROCESSING A SILICON SUBSTRATE

摘要

There is provided a capacitive coupled electodeless plasma apparatus for processing a silicon substrate. The apparatus includes at least one inductive antenna driven by time-varying power sources for providing at least one electrostatic field; and a chamber for locating the silicon substrate. There is also provided a method for processing a silicon substrate using capacitively coupled electrodeless plasma.