| 摘要 |
<p>PROBLEM TO BE SOLVED: To efficiently perform a reset operation in a three-dimensional structure semiconductor storage device including a variable resistive element.SOLUTION: A semiconductor storage device includes: a plurality of first wirings BL that extend in a first direction perpendicular to a surface of a substrate 20 and are arranged with a predetermined pitch in a second direction parallel to the surface of the substrate 20; a plurality of second wirings WL that extend in the second direction and are arranged with the predetermined pitch in the first direction; memory cells MC that are provided at intersections of the first wirings BL and second wirings WL and include a variable resistive element VR; third wirings 46 that are provided between the plurality of second wirings so as to extend in the second direction; and a control circuit 14 that can execute a first operation in which a voltage is applied to the memory cells MC via the first wirings BL and second wirings WL so as to change the resistance values of the variable resistive elements VR, and a second operation in which heat is supplied to the memory cells MC by using the third wirings 46.</p> |
