发明名称 COATING LAYER FOR A CONDUCTIVE STRUCTURE
摘要 A coating layer for use in copper integrated circuit interconnect and other conductive structures hinders and decreases oxide growth on surfaces of such conductive structures. The coating layer includes an amorphous copper containing layer deposited on a crystalline copper substrate, such as utilized for a lead frame and a bonding wire. Additional amorphous layers may be interposed between the amorphous copper containing layer and the copper substrate, such as an amorphous tantalum nitride layer and an amorphous titanium nitride layer.
申请公布号 US2015214177(A1) 申请公布日期 2015.07.30
申请号 US201414525855 申请日期 2014.10.28
申请人 Freescale Semiconductor, Inc. 发明人 Hegde Rama I.
分类号 H01L23/00;H01L21/48;H01L23/495 主分类号 H01L23/00
代理机构 代理人
主权项 1. A conductive structure comprising: a crystalline copper substrate suitable for an electrically conductive structure; and a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film.
地址 Austin TX US