发明名称 MODE-CHANGEABLE DUAL DATA RATE RANDOM ACCESS MEMORY DRIVER WITH ASYMMETRIC OFFSET AND MEMORY INTERFACE INCORPORATING THE SAME
摘要 A memory driver, a method of driving a command bus for a synchronous dual data rate (sDDR) memory and a memory controller for controlling dynamic random-access memory (DRAM). In one embodiment, the memory driver includes: (1) pull-up and pull-down transistors couplable to a command bus of a memory controller and operable in 1N and 2N timing modes and (2) gear down offset circuitry coupled to the pull-up transistor and operable to offset the command bus when transitioning out of the 1N timing mode and increase an extent and duration of 1-0-1 transitions on the command bus.
申请公布号 US2015213855(A1) 申请公布日期 2015.07.30
申请号 US201414164005 申请日期 2014.01.24
申请人 Nvidia Corporation 发明人 Chung Daehyun;Sudhakaran Sunil
分类号 G11C7/12;G11C7/22;G11C11/4076 主分类号 G11C7/12
代理机构 代理人
主权项 1. A memory driver, comprising: pull-up and pull-down transistors couplable to a command bus of a memory controller and operable in 1N and 2N timing modes; and gear down offset circuitry coupled to said pull-up transistor and operable to offset said command bus when transitioning out of said 1N timing mode and increase an extent and duration of 1-0-1 transitions on said command bus.
地址 Santa Clara CA US