发明名称 |
MODE-CHANGEABLE DUAL DATA RATE RANDOM ACCESS MEMORY DRIVER WITH ASYMMETRIC OFFSET AND MEMORY INTERFACE INCORPORATING THE SAME |
摘要 |
A memory driver, a method of driving a command bus for a synchronous dual data rate (sDDR) memory and a memory controller for controlling dynamic random-access memory (DRAM). In one embodiment, the memory driver includes: (1) pull-up and pull-down transistors couplable to a command bus of a memory controller and operable in 1N and 2N timing modes and (2) gear down offset circuitry coupled to the pull-up transistor and operable to offset the command bus when transitioning out of the 1N timing mode and increase an extent and duration of 1-0-1 transitions on the command bus. |
申请公布号 |
US2015213855(A1) |
申请公布日期 |
2015.07.30 |
申请号 |
US201414164005 |
申请日期 |
2014.01.24 |
申请人 |
Nvidia Corporation |
发明人 |
Chung Daehyun;Sudhakaran Sunil |
分类号 |
G11C7/12;G11C7/22;G11C11/4076 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
1. A memory driver, comprising:
pull-up and pull-down transistors couplable to a command bus of a memory controller and operable in 1N and 2N timing modes; and gear down offset circuitry coupled to said pull-up transistor and operable to offset said command bus when transitioning out of said 1N timing mode and increase an extent and duration of 1-0-1 transitions on said command bus. |
地址 |
Santa Clara CA US |