| 摘要 |
<p>This disclosure relates to a memory device that includes at least one magnetic track on a substrate, wherein the at least one magnetic track comprises one or more magnetic domains. Contacts can be disposed on the at least one magnetic track according to a predetermined arrangement to form a plurality of bitcells on the at least one magnetic track, wherein each one of the plurality of bitcells is configured to store at least one magnetic domain. The device can include a timing circuit connected to the contacts, with the timing circuit being configured to apply to the contacts multiple phases of electric currents according to a predetermined timing sequence to cause the at least one magnetic domain to shift from the each one of the plurality of bitcells to an adjacent one of the plurality of bitcells on the at least one magnetic track.</p> |
