发明名称 System and Method for Shifting Critical Dimensions of Patterned Films
摘要 Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. In general, methods herein include patterning processes that identify or receive a critical dimension signature that spatially characterizes critical dimension values that correspond to the substrate. A pattern of electromagnetic radiation is projected onto a patterning film coated on substrate using a digital pixel-based projection system. A conventional photolithographic exposure process is executed subsequent to, or prior to, the pixel-based projection. The patterning film can then be developed to yield a relief pattern having critical dimensions shaped by both exposure processes.
申请公布号 US2015212421(A1) 申请公布日期 2015.07.30
申请号 US201514603595 申请日期 2015.01.23
申请人 Tokyo Electron Limited 发明人 deVilliers Anton J.;Fulford Daniel
分类号 G03F7/30 主分类号 G03F7/30
代理机构 代理人
主权项 1. A method for patterning a substrate, the method comprising: identifying a critical dimension signature that spatially characterizes observed critical dimension values of structures on substrates corresponding to a substrate to be processed; coating the substrate with a patterning film, the patterning film being at least initially radiation-sensitive in that a solubility of the patterning film is changeable by exposure to actinic radiation; projecting a pattern of electromagnetic radiation onto the patterning film coated on the substrate, the pattern of electromagnetic radiation being projected using a digital pixel-based projection system having an array of independently addressable projection points, the projected pattern being based on the critical dimension signature; and subsequent to the substrate being processed via a photolithographic exposure process, developing the patterning film such that soluble portions of the patterning film are removed resulting in remaining portions of the patterning film forming a relief pattern on the substrate.
地址 Tokyo JP