发明名称 |
System and Method for Shifting Critical Dimensions of Patterned Films |
摘要 |
Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. In general, methods herein include patterning processes that identify or receive a critical dimension signature that spatially characterizes critical dimension values that correspond to the substrate. A pattern of electromagnetic radiation is projected onto a patterning film coated on substrate using a digital pixel-based projection system. A conventional photolithographic exposure process is executed subsequent to, or prior to, the pixel-based projection. The patterning film can then be developed to yield a relief pattern having critical dimensions shaped by both exposure processes. |
申请公布号 |
US2015212421(A1) |
申请公布日期 |
2015.07.30 |
申请号 |
US201514603595 |
申请日期 |
2015.01.23 |
申请人 |
Tokyo Electron Limited |
发明人 |
deVilliers Anton J.;Fulford Daniel |
分类号 |
G03F7/30 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
1. A method for patterning a substrate, the method comprising:
identifying a critical dimension signature that spatially characterizes observed critical dimension values of structures on substrates corresponding to a substrate to be processed; coating the substrate with a patterning film, the patterning film being at least initially radiation-sensitive in that a solubility of the patterning film is changeable by exposure to actinic radiation; projecting a pattern of electromagnetic radiation onto the patterning film coated on the substrate, the pattern of electromagnetic radiation being projected using a digital pixel-based projection system having an array of independently addressable projection points, the projected pattern being based on the critical dimension signature; and subsequent to the substrate being processed via a photolithographic exposure process, developing the patterning film such that soluble portions of the patterning film are removed resulting in remaining portions of the patterning film forming a relief pattern on the substrate. |
地址 |
Tokyo JP |