发明名称 SOLAR CELL, BACK CONTACT FOR SOLAR CELL AND METHOD OF FABRICATING THE SAME
摘要 <p>The present invention relates to a method for controlling the thickness of a molybdenum selenide thin-film formed on a rear surface electrode while preparing the Cu(In,Ga)Se2 (CIGS) which is an absorption layer material used in a CIGS compound solar cell. The solar cell includes: a substrate; an electrode unit formed on the substrate; and a CIGS light absorption layer formed on the electrode unit. The electrode unit includes: a molybdenum layer formed on the substrate; a molybdenum nitride layer formed on the molybdenum layer; and a molybdenum selenide layer formed on the molybdenum nitride layer.</p>
申请公布号 KR20150087775(A) 申请公布日期 2015.07.30
申请号 KR20140047999 申请日期 2014.04.22
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YEUNGNAM UNIVERSITY 发明人 JEON, CHAN WOOK;KIM, SOO HYUN
分类号 H01L31/0749;H01L31/0224;H01L31/04 主分类号 H01L31/0749
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