发明名称 WAFER LEVEL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A wafer level semiconductor device and manufacturing method thereof, the wafer level semiconductor device comprising a wafer level substrate (11), a plurality of series groups (b) formed on the surface of the substrate (11) and arranged in parallel, and a conducting wire (40); each series group (b) comprises a plurality of parallel groups (a) arranged in series; each parallel group (a) comprises a plurality of unit cells (20) arranged in parallel; each unit cell (20) is an independent functional unit fabricated by a semiconductor layer directly grown on the surface of the substrate (11); and the conducting wire (40) is at least electrically connected to two selected parallel groups (a) in each series group (b), to enable the conductive voltage of all series groups (b) to be substantially the same. The device has a simple structure, a simple and convenient manufacturing process, low cost and high approved product rate, and is suitable for large-scale manufacturing and application.
申请公布号 WO2015109968(A1) 申请公布日期 2015.07.30
申请号 WO2015CN70836 申请日期 2015.01.16
申请人 SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS OFCHINESE ACADEMY OF SCIENCE 发明人 CAI, YONG;ZHANG, YIBIN;XU, FEI
分类号 H01L27/15;H01L23/367;H01L25/075;H01L33/00;H01L33/62;H01L33/64 主分类号 H01L27/15
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