发明名称 METHOD AND SYSTEM FOR PERFORMING POST-ETCH ANNEALING OF A WORKPIECE
摘要 <p>A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.</p>
申请公布号 WO2015112358(A1) 申请公布日期 2015.07.30
申请号 WO2015US10985 申请日期 2015.01.12
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. 发明人 HURLEY, DAVID F.;PARNELL, DONI;TAHARA, SHIGERU;ISHII, TORU
分类号 H01L43/10;H01L43/12 主分类号 H01L43/10
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