发明名称 SUBSTRATE PROCESSING APPARATUS, SHOWER PLATE AND SUBSTRATE PROCESSING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To enhance the throughput of substrate processing and reduce the cost with keeping uniformity of the substrate processing by efficiently diffusing processing gas to be supplied to a substrate.SOLUTION: A COR processing apparatus 5 for processing a wafer W has a processing container 40 for air-tightly accommodating the wafer W, a mount table 41 on which the wafer W is mounted in the processing container 40, a shower plate 52 which is disposed to confront the wafer W mounted on the mount table 41 and has plural supply nozzles 90 formed therein, and processing gas supply sources 71, 74 for supplying processing gas through the shower plate 52 into the processing container 40. The supply nozzle 90 has a gas inlet hole which is formed to a predetermined position in the thickness direction of the shower plate 52 from the upper end face of the shower plate 52 to the lower end face thereof, and plural gas outlet holes which intercommunicate with the gas inlet hole in an oblique direction and extend to the lower end face of the shower plate 52.</p>
申请公布号 JP2015138885(A) 申请公布日期 2015.07.30
申请号 JP20140009694 申请日期 2014.01.22
申请人 TOKYO ELECTRON LTD 发明人 MIDORIKAWA YOHEI
分类号 H01L21/302 主分类号 H01L21/302
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