| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing liquid capable of improving surface flatness of a film to be polished in a chemical mechanical polishing (CMP) technology for polishing the film to be polished formed on a surface of a substrate and a polishing method using the same.SOLUTION: There is provided a polishing liquid containing particles containing cerium oxide, a flattening agent, an organic acid compound, a pH adjustment agent, and water, where the flattening agent is an acrylic acid-based polymer, the organic acid compound is an organic compound having a sulfo group and an amino group, and pH is 4.0 to 6.0. The blended amount of the flattening agent is 0.01 to 1 mass% based on the total mass of the polishing liquid, the flattening agent is a single polymer of acrylic acid or methacrylic acid, or at least one kind selected from a copolymer of acrylic acid and methacrylic acid and a copolymer of acrylic acid or methacrylic acid and other copolymerizable monomer, and the organic acid compound is at least one kind selected from 4-aminobenzene sulfonic acid (sulfanilic acid) and amidosulfuric acid (sulfamic acid) of 0.001 to 1 mass% based on the total mass of the polishing liquid.</p> |
