SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide substrate which is inexpensive and excellent in insulation property.SOLUTION: A silicon carbide substrate comprises: a first layer composed of a silicon carbide formed by a CVD method or a sintering method; and a second layer which is formed on a surface of the first layer and composed of a material different from silicon carbide. The second layer has specific resistance lower than that of the fist layer by 1×10Ωcm and over. The silicon carbide substrate has overall specific resistance of 1×10Ωcm and over.