THIN EPITAXIAL SILICON CARBIDE WAFER FABRICATION

摘要

Techniques for fabricating thin epitaxial SiC device wafers are described. A bulk SiC wafer is used to provide a seed layer of a thin layer of SiC for epitaxially growing SiC. The seed layer is exfoliated from the bulk SiC after bonding the bulk SiC to a handle substrate. The bulk SiC wafer from which the thin layer of SiC is exfoliated may be re-used in fabricating subsequent thin film epitaxial SiC wafers. After growing epitaxial SiC from the seed layer on the handle substrate, devices may be fabricated in the epitaxial SiC and the handle substrate can be removed. The handle substrate can be re-used in fabricating subsequent thin film epitaxial SiC wafers. The epitaxial SiC can be cut into dies and packaged as an SiC chip or bonded to another substrate, such as a silicon substrate with devices formed thereon.

主权项

1. A method of fabricating thin epitaxial SiC device wafers comprising:
bonding a bulk SiC wafer to a first substrate; performing an exfoliation process such that a first portion of the bulk SiC wafer remains on the first substrate as a seed layer and a second portion of the bulk SiC is separated; processing the second portion of the bulk SiC for bonding to a second substrate; growing epitaxial SiC on the seed layer; and debonding at least a portion of the first substrate from the epitaxial SiC.