| 发明名称 |
MONOLITHICALLY INTEGRATED TRANSISTORS FOR A BUCK CONVERTER USING SOURCE DOWN MOSFET |
| 摘要 |
An integrated semiconductor transistor chip for use in a buck converter includes a high side transistor formed on the chip and comprising a laterally diffused metal oxide semiconductor (LDMOS) transistor and a low side transistor formed on the chip and comprising a source down metal oxide semiconductor field effect transistor (MOSFET). The chip also includes a substrate of the chip for use as a source for the low side transistor and an n-doped well for isolation of the high side transistor from the source of the low side transistor. |
| 申请公布号 |
US2015214222(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201514608391 |
申请日期 |
2015.01.29 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WANG Jun;BAIOCCHI Frank;LIN Haian |
| 分类号 |
H01L27/088;H01L29/78;H02M3/155 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated semiconductor transistor chip for use in a buck converter, comprising:
a high side transistor formed on the chip and comprising a laterally diffused metal oxide semiconductor (LDMOS) transistor; a low side transistor formed on the chip and comprising a source down metal oxide semiconductor field effect transistor (MOSFET); a substrate of the chip for use as a source for the low side transistor; and an n-doped well for isolation of the high side transistor from the source of the low side transistor. |
| 地址 |
Dallas TX US |
