METHOD FOR MANUFACTURING AN INTERDIGITATED BACK CONTACT SOLAR CELL
摘要
<p>A method for manufacturing an interdigitated back contact solar cell, comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.</p>
申请公布号
WO2015112569(A1)
申请公布日期
2015.07.30
申请号
WO2015US12202
申请日期
2015.01.21
申请人
E. I. DU PONT DE NEMOURS AND COMPANY
发明人
SCARDERA, GIUSEPPE;KELMAN, MAXIM;DUGAN, SHANNON;POPLAVSKYY, DMITRY;INNS, DANIEL ANEURIN;BENDIMERAD, KARIM LOTFI