METHODS FOR FORMING INTERCONNECT LAYERS HAVING TIGHT PITCH INTERCONNECT STRUCTURES

摘要

Processes for forming interconnection layers having tight pitch interconnect structures within a dielectric layer, wherein trenches and vias used to formed interconnect structures have relatively low aspect ratios prior to metallization. The low aspect ratios may reduce or substantially eliminated the potential of voids forming within the metallization material when it is deposited. Embodiments herein may achieve such relatively low aspect ratios through processes that allows for the removal of structures, which are utilized to form the trenches and the vias, prior to metallization.

主权项

1. A method of forming a microelectronic structure, comprising:
forming a dielectric layer on a substrate; forming a hardmask layer on the dielectric layer; forming a plurality of backbone structures on a hardmask layer; forming side spacers adjacent sides of each of the plurality of backbone structures; etching a portion of the first hardmask and a portion of the dielectric layer between adjacent side spacers between at least two adjacent backbone structures to form at least one first trench; depositing a sacrificial material in the at least one first trench; removing at least one backbone structure and etching a portion of the hardmask layer and the dielectric layer which resided below the at least one backbone structure to form at least one second trench; depositing a fill material in the at least one second trench; removing the side spacers; removing the sacrificial material from the at least one first trench; removing the fill material from the at least one second trench; and depositing a conductive material in the at least one first trench and the at least one second trench.