MASK STRUCTURES AND METHODS OF MANUFACTURING

摘要

A lithography mask structure is provided, including: a substrate; at least one reflective layer over the substrate; and an absorber film stack over the at least one reflective layer, the absorber film stack including a plurality of first film layers of a first material and at least one second film layer of a second material. The second material is different from the first material, and the second film layer(s) is interleaved with the plurality of first film layers. In one embodiment, the total thickness of the absorber film stack is less than 50 nm. In another embodiment, the reflectivity of the absorber film stack is less than 2% for a pre-defined wavelength of EUV light. In a further embodiment, the second film layer(s) prevents the average crystallite size of the first film layers from exceeding the thickness of the first film layers.

主权项

1. A structure comprising:
a lithography mask comprising:
a substrate;at least one reflective layer over the substrate; andan absorber film stack over the at least one reflective layer, the absorber film stack comprising a plurality of first film layers and at least one second film layer, the first film layers comprising a first material and the at least one second film layer comprising a second material, the second material being different from the first material, wherein the at least one second film layer is interleaved with first film layers of the plurality of first film layers.